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| inchange semiconductor product specification silicon npn power transistors BDX87C description ? with to-3 package ? complement to type bdx88c ? darlington applications ? designed for use in power linear and switching application. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i cm collector current(peak) 18 a i b base current 0.2 a p t total power dissipation t c =25 ?? 120 w t j max. operating junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.45 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BDX87C characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =6a ;i b =24ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =12a ;i b =120ma 3.0 v v besat base-emitter saturation voltage i c =12a ;i b =120ma 4.0 v v be base-emitter on voltage i c =6a ; v ce =3v 2.8 v h fe-1 dc current gain i c =5a ; v ce =3v 1000 h fe-2 dc current gain i c =6a ; v ce =3v 750 18000 h fe-3 dc current gain i c =12a ; v ce =3v 100 i cbo collector cut-off current v cb =100v; i e =0 t c =150 ?? 0.5 5.0 ma i ceo collector cut-off current v ce =50v; i b =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma v f-1 diode forward voltage i f =3a 1.8 v v f-2 diode forward voltage i f =8a 2.5 v inchange semiconductor product specification 3 silicon npn power transistors BDX87C package outline fig.2 outline dimensions |
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